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PD - 91742A
IRF9Z24NS/L
HEXFET ? Power MOSFET
l
Advanced Process Technology
l
l
Surface Mount (IRF9Z24NS)
Low-profile through-hole (IRF9Z24NL)
D
V DSS = -55V
l 175°C Operating Temperature
l P-Channel
l Fast Switching
l Fully Avalanche Rated
Description
G
S
R DS(on) = 0.175 ?
I D = -12A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
D P ak
highest  power  capability  and  the  lowest  possible  on-
resistance in any existing surface mount package. The
D 2 Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z24NL) is available for
low-profile applications.
Absolute Maximum Ratings
Parameter
2
Max.
T O -26 2
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ -10V ?
-12
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ -10V ?
Pulsed Drain Current ??
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
-8.5
-48
3.8
45
0.30
± 20
96
-7.2
4.5
-5.0
A
W
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
–––
3.3
40
°C/W
www.irf.com
1
7/16/99
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